Growth of microstructures by molecular beam epitaxyGOSSARD, A. C.IEEE journal of quantum electronics. 1986, Vol 22, Num 9, pp 1649-1655, issn 0018-9197Article

Quantum-engineering of III-V semiconductor structuresGOSSARD, A. C; FAFARD, S.Solid state communications. 1994, Vol 92, Num 1-2, pp 63-70, issn 0038-1098Article

Capacitance-voltage profiling through graded heterojucntions : theory and experimentSUNDARAM, M; GOSSARD, A. C.Journal of applied physics. 1993, Vol 73, Num 1, pp 251-260, issn 0021-8979Article

Modulation-doped graded structures : growth and characterizationSUNDARAM, M; GOSSARD, A. C; HOLTZ, P. O et al.Journal of applied physics. 1991, Vol 69, Num 4, pp 2370-2375, issn 0021-8979, 6 p.Article

Negative photoconductivity due to carrier drag in GaAs/AlGaAs quantum wellsJUEN, S; HOPFEL, R. A; GOSSARD, A. C et al.Applied physics letters. 1989, Vol 54, Num 21, pp 2097-2099, issn 0003-6951Article

Nonequilibrium electron-hole plasma in GaAs quantum wellsHOPFEL, R. A; JAGDEEP SHAH; GOSSARD, A. C et al.Physical review letters. 1986, Vol 56, Num 7, pp 765-768, issn 0031-9007Article

Complementary p-MODFET and n-HB MESFET (Al, Ga)As transistorsKIEHL, R. A; GOSSARD, A. C.IEEE electron device letters. 1984, Vol 5, Num 12, pp 521-523, issn 0741-3106Article

Quantum oscillations in the thermal conductance of GaAs/AlGaAs heterostructuresEISENSTEIN, J. P; GOSSARD, A. C; NARAYANAMURTI, V et al.Physical review letters. 1987, Vol 59, Num 12, pp 1341-1344, issn 0031-9007Article

Potential-well shape U(z)=U₀|z/(L_z/2)|^2/3 with the GaAs/Al_xGa_1-xAs systemSPUTZ, S. K; GOSSARD, A. C.Physical review. B, Condensed matter. 1988, Vol 38, Num 5, pp 3553-3555, issn 0163-1829, 3 p.Article

Structure of AlAs-GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxyPETROFF, P. M; GOSSARD, A. C; WIEGMANN, W et al.Applied physics letters. 1984, Vol 45, Num 6, pp 620-622, issn 0003-6951Article

p-channel (A1,Ga)As/GaAs modulation-doped logic gatesKIEHL, R. A; GOSSARD, A. C.IEEE electron device letters. 1984, Vol 5, Num 10, pp 420-422, issn 0741-3106Article

Some effects of a longitudinal electric field on the photoluminescence of p-doped GaAs-Al_xGa_1-xAs quantum well heterostructuresMILLER, R. C; GOSSARD, A. C.Applied physics letters. 1983, Vol 43, Num 10, pp 954-956, issn 0003-6951Article

Electron transport in III-V nitride two-dimensional electron gasesJENA, D; SMORCHKOVA, I; GOSSARD, A. C et al.Physica status solidi. B. Basic research. 2001, Vol 228, Num 2, pp 617-619, issn 0370-1972Conference Paper

Magneto optics of an electron system with variable dimensionalityPETERS, C; WIXFORTH, A; SUNDARAM, M et al.Solid state communications. 1993, Vol 88, Num 1, pp 27-31, issn 0038-1098Article

Lateral motion of terrace width distributions during step-flow growthCHALMERS, S. A; TSAO, J. Y; GOSSARD, A. C et al.Applied physics letters. 1992, Vol 61, Num 6, pp 645-647, issn 0003-6951Article

Anisotropic band structure of a parabolically confined electron system subjected to an in-plane magnetic fieldWIXFORTH, A; KALOUDIS, M; SUNDARAM, M et al.Solid state communications. 1992, Vol 84, Num 9, pp 861-864, issn 0038-1098Article

Modulation-doped field-effect transistor based on a two-dimensional hole gasSTORMER, H. L; BALDWIN, K; GOSSARD, A. C et al.Applied physics letters. 1984, Vol 44, Num 11, pp 1062-1064, issn 0003-6951Article

Energy-gap discontinuities and effective masses for GaAs-Al_xGa_1-xAs quantum wellsMILLER, R. C; KLEINMAN, D. A; GOSSARD, A. C et al.Physical review. B, Condensed matter. 1984, Vol 29, Num 12, pp 7085-7087, issn 0163-1829Article

Hot-electron memory effect in double-leyered heterostructuresLURYI, S; KASTALSKY, A; GOSSARD, A. C et al.Applied physics letters. 1984, Vol 45, Num 12, pp 1294-1296, issn 0003-6951Article

Intersubband transitions in band gap engineered parabolic potential wellsHARTUNG, M; WIXFORTH, A; CAMPMANN, K. L et al.Superlattices and microstructures. 1996, Vol 19, Num 1, pp 55-60, issn 0749-6036Article

Intersubband scattering as a tool to study the symmetry properties of a parabolic quantum wellJURK, R; ENSSLIN, K; HOPKINS, P. F et al.Superlattices and microstructures. 1994, Vol 15, Num 3, pp 325-327, issn 0749-6036Article

Size effect in parabolic GaAs/Al_xGa_1-xAs quantum wellsWALUKIEWICZ, W; HOPKINS, P. F; SUNDARAM, M et al.Physical review. B, Condensed matter. 1991, Vol 44, Num 19, pp 10909-10912, issn 0163-1829Article

Doubly resonant LO-phonon Raman scattering observed with GaAs-Al_xGa_1-xAs quantum wellsKLEINMAN, D. A; MILLER, R. C; GOSSARD, A. C et al.Physical review. B, Condensed matter. 1987, Vol 35, Num 2, pp 664-674, issn 0163-1829Article

Observation of doubly resonant LO-phonon Raman scattering with GaAs-Al_xGa_1-xAs quantum wellsMILLER, R. C; KLEINMAN, D. A; GOSSARD, A. C et al.Solid state communications. 1986, Vol 60, Num 3, pp 213-216, issn 0038-1098Article

Electroreflectance of GaAs-AlGaAs modulation-doped field-effect transistorsHOPFEL, R. A; SHAH, J; GOSSARD, A. C et al.Applied physics letters. 1985, Vol 47, Num 2, pp 163-165, issn 0003-6951Article